High Curie temperature Mn5Ge3 thin films produced by non-diffusive reaction

High Curie temperature BiInO3-PbTiO3 films.

High Curie temperaturepiezoelectricthin films of xBiInO3-(1-x)PbTiO3 (x = 0.10, 0.15, 0.20, and 0.25) were prepared by pulsed laser deposition. It was found that the tetragonality of films decreased with increasing BI content. The dielectric constant and transverse piezoelectric coefficient (e31,f ) exhibit the highest values of 665 and -13.6 C/m2 at x = 0.20. Rayleigh analyses were performed t...

Transport Spin Polarization of High-Curie Temperature MnBi Films

Curie temperature of FePt:B2O3 nanocomposite films

Spin polarization and electronic structure of ferromagnetic Mn5Ge3 epilayers

Semiconductor spintronics has recently been recognized for its potential to combine the spin selectivity and nonvolatility of ferromagnetic compounds with the ability to fabricate hybrid thin-film devices naturally integrated with conventional semiconductors [1]. Yet in order to succeed in technological applications one has to be able to introduce roomtemperature spin-polarized materials that a...

Growth and Characterization of Thin MoS2 Films by Low- Temperature Chemical Bath Deposition Method

Transition metal dichalcogenide (TMDC) materials are very important inelectronic and optical integrated circuits and their growth is of great importance in thisfield. In this paper we present growth and fabrication of MoS2 (Molibdan DiSulfide)thin films by chemical bath method (CBD). The CBD method of growth makes itpossible to simply grow large area scale of the thin la...